Solvent Resistant Hole-Transporting Thin Films via Diacetylene Cross-Linking and Their Applications in Solution-Processed QLEDs
Source abstract
Abstract
A diacetylene-based thermal cross-linking method for hole-transporting layers (HTLs) has been investigated. The thin films of 4,4-bis(carbazol-9-yl)biphenyl (CBP) oligomers functionalized with diacetylene groups were cross-linked at 150 °C. The cross-linked thin films showed smooth surface morphologies and solvent stabilities in chloroform, chlorobenzene, indane, 3,5-dimethylanisole, and so on. The quantum dot light-emitting diode (QLED) devices based on the cross-linked HTLs displayed high current density, large maximum brightness, long device lifetime, and comparable external quantum efficiency in comparison with the corresponding devices based on the pristine HTLs. The hole-transporting properties of the cross-linked and the pristine HTLs were also studied in hole-only devices (HODs). This cross-linking method could be potentially useful in solution fabrication of multilayer organic electronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shanghai Key Laboratory of Electrical Insulation and Thermal Aging, School of Chemistry and Chemical Engineering, Shanghai Jiaotong University, 800 Dongchuan Road, Shanghai 200240, China
Centre for Chemistry of High-Performance & Novel Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai JiaoTong University, Shanghai 200240, China
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China
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