journal article·2025-06-20

Mechanism of damping of Rabi oscillations of NV centers in a 6 H -SiC crystal

Fadis F. Murzakhanov, Ekaterina V. Dmitrieva, Eduard I. Baibekov, Margarita A. Sadovnikova, George V. Mamin, Sergey S. Nagalyuk, Marat R. Gafurov

Physical Review B· Volume 111· Issue 21
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Abstract

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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Magnetic Properties and Applications

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Affiliations

Kazan Federal University

Ioffe Institute

Funding

Russian Science Foundation

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