Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2Te3 grown on europium iron garnet
Source abstract
Abstract
The topological Hall effect (THE) is a Hall response that arises from the deflection of motion of charge carriers flowing through nontrivial spin textures. Here, the authors observe a significant THE and investigate its interplay with the spin-polarized topological surface states in a proximity-magnetized topological insulator/ferrimagnet heterostructure. Specifically, they demonstrate a sign change in THE via a top electrical gate as the Fermi level is tuned from the electron-doped to the hole-doped region of the gapped Dirac cone.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · Quantum and electron transport phenomena · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan
Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
Center for Quantum Science and Technology, National Tsing Hua University, Hsinchu 30013, Taiwan
Funding
National Science and Technology Council
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