Band-center metal-insulator transition in bond-disordered graphene
Source abstract
Abstract
We study the transport properties of a tight-binding model of noninteracting fermions with random hopping on the honeycomb lattice. At the particle-hole-symmetric chemical potential, the absence of diagonal disorder (random on-site potentials) places the system in the well-studied chiral orthogonal universality class of disordered fermion problems, which are known to exhibit both a critical metallic phase and a dimerization-induced localized phase. Here, our focus is the behavior of the two-terminal conductance and the Lyapunov spectrum in quasi-one-dimensional geometry near the dimerization-driven transition from the metallic to the localized phase. For a staggered dimerization pattern on the square and honeycomb lattices, we find that the renormalized localization length $\ensuremath{\xi}/M$ ($M$ denotes the width of the sample) and the typical conductance display scaling behavior controlled by a crossover length scale that diverges with exponent $\ensuremath{\nu}\ensuremath{\approx}1.05(5)$ as the critical point is approached. However, for the plaquette dimerization pattern, we observe a relatively large exponent $\ensuremath{\nu}\ensuremath{\approx}1.55(5)$, revealing an apparent nonuniversality of the delocalization-localization transition in the BDI symmetry class.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Topological Materials and Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India
Department of Physics, Concordia University, Montreal, Quebec, Canada
Department of Theoretical Physics, Tata Institute of Fundamental Research, Mumbai 400005, India
Funding
Science and Engineering Research Board · Department of Science and Technology, Ministry of Science and Technology, India
References (33)
Show source-provided references
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