Designing band structures by patterned dielectric superlattices

We investigate the electronic structure of graphene monolayers subjected to patterned dielectric superlattices (SLs). Through a capacitance model approach, we simulate realistic devices capable of imposing periodic potentials on graphene. By means of both tight-binding and continuum models, we analyze the electronic structure across varied patterning geometries, including triangular, kagome, and square configurations. We explicitly explore the influence of device parameters such as the SL potential strength, geometry, and periodicity on the electronic properties of graphene. By introducing a long-range Coulomb interaction, we found an emergent periodic potential strong enough to open a mass gap, thereby generating a Chern band. In this paper, we highlight the robustness and versatility of patterned dielectric SLs for band engineering in graphene systems.