Tunneling optoresistance effect in two-dimensional modulated quantum structures

Spin- and valley-resolved transport properties of a double beam off-resonant circular polarized light-modulated (CPL-modulated) junction based on monolayer transition-metal dichalcogenides (TMDc) are studied. We find that tuning between a high resistance configuration and a low resistance one can be realized with pure CPL modulation. Numerical results of spin- and valley-resolved transport show the tunneling resistance induced by CPL is different from previously reported tunneling magnetoresistance (TMR) effect based on two-dimensional materials. Out of analogy, we name it as the tunneling optoresistance (TOR) effect, and introduced TOR ratio to depict the difference between configurations with high and low tunneling resistance. Our results imply that ${\mathrm{TOR}}_{\mathrm{max}}=1$ can be realized when the CPL-induced gap is beyond a certain limit. We also give an intuitive explanation under near the $K/{K}^{\ensuremath{'}}$ valley approximation which matches numerical results well. Our results show optically modulated quantum structures based on TMDc materials may dynamically tune between a high resistance configuration and a low resistance configuration, indicating its promising potential for applications in high-speed storage and spintronic or valleytronic devices.