journal article·2024-10-16

Pressure-induced superconductivity in quasi-one-dimensional ZrS 3

Binbin Yue, Wei Zhong, He Zhang, Jie Zhou, Jingwei Miao, Saori Kawaguchi, Hirokazu Kadobayashi, Fang Hong

Physical Review B· Volume 110· Issue 14
Publisher page

Abstract

Due to their strong anisotropic and quasi-one-dimensional (1D) nature, transition metal trichalcogenides (TMTCs) $M{X}3$ exhibit extraordinary electronic properties, such as charge density waves, superconducting transitions, and potentially a Luttinger liquid state. Rich quantum phenomena emerge under pressure, owing to enhanced interchain interactions, and exhibit strong dependencies on the elements $M$ and $X$. In this paper, we investigate structural phase transitions and the insulator-to-superconductor transition in highly insulating ${\mathrm{ZrS}}3$ under pressures up to 119 GPa. A first-order isosymmetric transition occurs above 16 GPa, companying by a sudden reduction in the band gap due to the breaking of S-S bonds within the 1D chains and the formation of S-S bonds between chains. Superconducting behavior is observed starting at 63 GPa, with ${T}c$ increasing under pressure and reaching 9.1 K at 119 GPa. Our findings provide insights into the high-pressure electronic properties of insulating ${\mathrm{ZrS}}3$ and stimulate further exploration of emergent phenomena in other low-dimensional material systems.
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Research context

OpenAlex topics: 2D Materials and Applications · Electronic and Structural Properties of Oxides · Organic and Molecular Conductors Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for High Pressure Science and Technology Advanced Research

Institute of Physics, Chinese Academy of Sciences

University of Chinese Academy of Sciences

SPring-8

Songshan Lake Materials Laboratory

Funding

National Natural Science Foundation of China · National Key Research and Development Program of China · Chinese Academy of Sciences · Japan Synchrotron Radiation Research Institute

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