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journal article·2024-03-01Open access

Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy

Loïc Méchin, François Médard, Joël Leymarie, Sophie Bouchoule, Jean-Yves Duboz, Blandine Alloing, Jesús Zuñiga-Pérez, Pierre Disseix

Physical Review B· Volume 109· Issue 12
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Source abstract

Abstract

Optical spectroscopy techniques, including time-resolved and intensity-dependent photoluminescence, are employed here to optically demonstrate, for the first time, the presence of a buried two-dimensional hole gas (2DHG) in a nitride-based heterostructure. The characteristic spectral and temporal features of this recombination highlight the asymmetric electric field distribution on either side of the 2DHG. The effects of this electric field are discussed, particularly regarding their implications for optical recombination mechanisms within the heterostructure.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices

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Affiliations

Université Clermont Auvergne, Clermont Auvergne INP, CNRS, Institut Pascal, F-63000 Clermont-Ferrand, France

Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, F-91120 Palaiseau, France

Université Côte d'Azur, CNRS, CRHEA, rue Bernard Gregory, Sophia Antipolis, F-06560 Valbonne, France

Majulab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 117543, Singapore

Funding

Agence Nationale de la Recherche

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