Reductions in the thermal conductivity of irradiated silicon governed by displacement damage
Source abstract
Abstract
We report on the measured thermal conductivity of silicon irradiated with an array of ions: ${\mathrm{C}}2+,$ ${\mathrm{N}}2+,$ ${\mathrm{Al}}2+,$ ${\mathrm{Si}}2+,$ ${\mathrm{P}}2+,$ and ${\mathrm{Ge}}2+$. Results are analyzed in consideration of ion mass, radius, and induced displacement damage. Recrystallization of select samples via annealing demonstrates that structural disorder imparted by incident ions, rather than the ions themselves, drive the reduction in thermal conductivity. This, in turn, is dictated by the mass of the ion. A generalized model is provided to relate thermal conductivity to displacement damage. Knowledge of the displacements-per-atom profile can thus be used to predict thermal conductivity reduction for silicon devices in extreme environments.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thermal properties of materials · Semiconductor materials and devices · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Laser Thermal Analysis, Inc., Charlottesville, Virginia 22902, USA
Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
Funding
Office of Naval Research · Office of Science · U.S. Department of Energy · Sandia National Laboratories
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