Homogeneous optical anisotropy in an ensemble of InGaAs quantum dots induced by strong enhancement of the heavy-hole band Landé parameter q
Source abstract
Abstract
The authors report on a mechanism of strong enhancement of the band Land\'e parameter $q$ due to in-plane confinement of holes and the valence-band warping. This explains the surprisingly large in-plane hole $g$ factor in symmetric self-assembled (In,Ga)As/GaAs quantum dots with $D2d$ symmetry as revealed by coherent optical spectroscopy. The proposed mechanism results in uniform magnetic field induced optical anisotropy for the entire quantum dot ensemble, which is a prerequisite for the realization of spin quantum memories and spin-photon entanglement in the ensemble.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Quantum Information and Cryptography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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