Electric field induced modulation of transverse resistivity anomalies in ultrathin SrRuO3 epitaxial films

We show that transverse resistivity anomalies in $\mathrm{SrRu}{\mathrm{O}}₃$ epitaxial thin films, which have been claimed to be a manifestation of the topological Hall effect, can be modulated by applying gate voltages (${V}_{\mathrm{G}}$). The electric field induced effects on the anomalies are found to be the same as those of the saturated anomalous Hall resistivity (${\ensuremath{\rho}}_{\mathrm{AHE}}$), revealing that the anomalies arise as a result of the coexistence of the intrinsic and extrinsic ${\ensuremath{\rho}}_{\mathrm{AHE}}$. Furthermore, the ${V}_{\mathrm{G}}$-induced effects on the anomalies are dominated by the ${V}_{\mathrm{G}}$-induced changes in the intrinsic ${\ensuremath{\rho}}_{\mathrm{AHE}}$ while the extrinsic ${\ensuremath{\rho}}_{\mathrm{AHE}}$ remains unchanged under the ${V}_{\mathrm{G}}$ applications. Our results reveal that electric field induced modulations in the anomalous Hall effect depend on its mechanism.