journal article·2022-02-22Open access

Low-temperature acanthite-like phase of Cu2S : Electronic and transport properties

Ho Ngoc Nam, Katsuhiro Suzuki, Tien Quang Nguyen, Akira Masago, Hikari Shinya, Tetsuya Fukushima, Kazunori Sato

Physical Review B· Volume 105· Issue 7

Abstract

The mobility and disorder in the lattice of Cu atoms as liquidlike behavior is an important characteristic affecting the thermoelectric properties of ${\mathrm{Cu}}2\mathrm{S}$. In this study, using a theoretical model called an acanthite-like structure for ${\mathrm{Cu}}2\mathrm{S}$ at a low-temperature range, we systematically investigate the electronic structure, intrinsic defect formation, and transport properties by first-principles calculations. Therefore, previous experimental reports on the indirect band-gap nature of ${\mathrm{Cu}}2\mathrm{S}$ were confirmed in this work with an energy gap of about 0.9--0.95 eV. As a result, the optical absorption coefficient estimated from this model also gives a potential value of $\ensuremath{\alpha}>{10}4\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ in the visible spectrum range. According to the bonding analysis and formation energy aspect, Cu vacancy is the most preferred defect to form in ${\mathrm{Cu}}2\mathrm{S}$, which primarily affects the conductive behavior as a $p$ type, as experimentally observed. Finally, the transport properties of ${\mathrm{Cu}}2\mathrm{S}$ system were successfully reproduced using an electron-phonon scattering method, highlighting the important role of relaxation time prediction in conductivity estimation instead of regarding it as a constant.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan

Center for Spintronics Research Network, Tohoku University, Sendai, Miyagi 980-8577, Japan

Institute of Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan

Institute for AI and Beyond, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

Funding

Japan Science and Technology Corporation · Ministry of Education, Culture, Sports, Science and Technology · Japan International Cooperation Agency

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