journal article·2020-11-30

Interplay between electronic correlation and atomic disorder in a low carrier density 4d transition-metal oxide

T. Yasuda, Y. Kondo, T. Kajita, K. Murota, D. Ootsuki, Y. Takagi, A. Yasui, N. L. Saini, T. Katsufuji, T. Mizokawa

Physical Review B· Volume 102· Issue 20
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Abstract

We have investigated electronic structure evolution by cation substitution in ${\mathrm{Ba}}_{3\ensuremath{-}x}{\mathrm{Sr}}x{\mathrm{Nb}}5{\mathrm{O}}15$ by means of hard x-ray photoemission spectroscopy. Localization of Nb $4d$ electrons manifests as spectral weight transfer from a coherent component at the Fermi level to an incoherent one at 1--2 eV below it. This behavior is similar to that of electron-doped ${\mathrm{SrTiO}}3$. On the other hand, Nb $3d$ and $4p$ core level spectra exhibit a screening effect with an energy scale of 1--2 eV by the coherent Nb $4d$ electrons similar to $4d$ electron systems near Mott transitions. The energy scale indicates that electron correlation is involved in the metal to insulator transition in the present system, although the Nb $4d$ band is about 1/10 filled. The present results suggest a mechanism of electron localization due to atomic disorder and electron correlation.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics

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