journal article·2019-05-15

Ultrahigh-pressure induced decomposition of silicon disulfide into silicon-sulfur compounds with high coordination numbers

Yuanzheng Chen, Xiaolei Feng, Jiao Chen, Xinyong Cai, Bai Sun, Hongyan Wang, Huarong Du, Simon A. T. Redfern, Yu Xie, Hanyu Liu

Physical Review B· Volume 99· Issue 18
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Abstract

Silicon disulfide, ${\mathrm{SiS}}2$, is thought to occur in interstellar dust and is of fundamental interest more generally among the silicon chalcogenides as a comparator to ${\mathrm{SiO}}2$, an important component of terrestrial planets. However, the high-pressure behaviors of silicon sulfides are unclear. Here, using an efficient structure search method, we systematically explore the structural evolution of different Si-S stoichiometries up to 250 GPa. ${\mathrm{SiS}}2$ is found to be stable below 155 GPa, above which it decomposes into two compounds, SiS and ${\mathrm{SiS}}3$. SiS adopts a high-symmetry cubic structure consisting of eightfold-coordinated silicon in face-sharing ${\mathrm{SiS}}8$ polyhedra, while ${\mathrm{SiS}}3$ crystallizes in a rhombohedral structure containing ninefold-coordinated ${\mathrm{SiS}}9$ polyhedra. Analyses suggest that the Si eightfold-coordination environment could be a common feature for group IV--VI compounds under high pressure. Our findings provide insights on the nature of Si-S compounds under ultrahigh pressure.
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Research context

OpenAlex topics: High-pressure geophysics and materials · Boron and Carbon Nanomaterials Research · Crystal Structures and Properties

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