Orbital gyrotropic magnetoelectric effect and its strain engineering in monolayer NbX2

Electrical control of the orbital degrees of freedom is an important area of research in the emerging field of ``orbitronics.'' Orbital gyrotropic magnetoelectric effect (OGME) is the generation of an orbital magnetization in a nonmagnetic metal by an applied electric field. Here, we show that strain induces a large GME in the monolayer $\mathrm{Nb}{X}₂$ $(X=\mathrm{S}, \mathrm{Se})$ normal to the plane, primarily driven by the orbital moments of the Bloch bands as opposed to the conventional spin magnetization, without any need for spin-orbit coupling. The key physics is captured within an effective two-band valley-orbital model and it is shown to be driven by three key ingredients: the intrinsic valley orbital moment, broken ${C}_3z$ symmetry, and strain-induced Fermi surface changes. The effect can be furthermore switched by changing the strain condition, with potential for future device applications.