Carrier dynamics and excitation of Eu3+ ions in GaN

The carrier mobility and dynamics of nonequilibrium carriers in Eu-doped GaN have been determined by above-band-gap, optically excited, time-resolved terahertz spectroscopy and compared with that of undoped GaN. The carrier mobility of GaN:Eu was an order of magnitude smaller than that of a similarly grown undoped GaN layer. Two time constants were observed in the carrier relaxation dynamics for GaN:Eu. A fast one (2.2 ps), which we related to an efficient nonradiative carrier trap, and a slower one (\ensuremath{\sim}85 ps) related to Eu-related traps. Ultrafast photoluminescence spectroscopy shows that Eu-related emission is observed within 100 ps after a pulsed excitation. These values set an upper value to the energy-transfer time from the Eu-related trap to $\mathrm{E}{\mathrm{u}}³⁺$ ion and underlie the high efficiency of the excitation of $\mathrm{E}{\mathrm{u}}³⁺$ ions in GaN.