Thickness dependence of crystal and electronic structures within heteroepitaxially grownBiFeO3thin films
Source abstract
Abstract
Crystal and electronic structures of $\mathrm{BiFe}{\mathrm{O}}3$ thin films ($\ensuremath{\sim}10$ and \ensuremath{\sim}300 nm) grown on $\mathrm{SrTi}{\mathrm{O}}3$ substrate have been investigated in terms of $\mathrm{BiFe}{\mathrm{O}}3$ film thickness dependence using the advanced transmission electron microscopy (TEM) technique. Electron diffraction patterns of both $\mathrm{BiFe}{\mathrm{O}}3$ thin films acquired along ${[011]}_{\mathrm{SrTi}{\mathrm{O}}3}$ cross sections clearly exhibited the existence of extra Bragg's reflections which are absent in that from $\mathrm{SrTi}{\mathrm{O}}3$. Structure factor calculations unambiguously revealed that the electron diffraction pattern corresponds to the [211] net pattern of rhombohedral $\mathrm{BiFe}{\mathrm{O}}3$. High-resolution TEM images combined with multislice simulation also demonstrated that the crystalline structure of both $\mathrm{BiFe}{\mathrm{O}}3$ films is rhombohedral. Electron energy loss spectroscopy results for both $\mathrm{BiFe}{\mathrm{O}}3$ thin films showed spectra with the characteristics of bulk $\mathrm{BiFe}{\mathrm{O}}3$, i.e., rhombohedral. The lattice mismatch of 2.5% between $\mathrm{BiFe}{\mathrm{O}}3$ and $\mathrm{SrTi}{\mathrm{O}}3$ found in a particular epitaxial relationship is considered to be the reason that $\mathrm{BiFe}{\mathrm{O}}3$ can grow by maintaining its bulk crystalline, i.e., rhombohedral, structure.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. 10.1070/PU1982v025n07ABEH00457010.1070/PU1982v025n07ABEH004570 ↗
2. S. V. Kiselev · Sov. Phys. Dokl. · 1963 · 7 · 742
3. 10.1088/0022-3719/15/23/02010.1088/0022-3719/15/23/020 ↗
4. 10.1063/1.186621410.1063/1.1866214 ↗
5. 10.1126/science.108061510.1126/science.1080615 ↗
6. 10.1126/science.110542210.1126/science.1105422 ↗
7. 10.1103/PhysRevB.76.02411610.1103/PhysRevB.76.024116 ↗
8. 10.1103/PhysRevB.72.13210110.1103/PhysRevB.72.132101 ↗
9. 10.1063/1.356306110.1063/1.3563061 ↗
10. 10.1063/1.221334710.1063/1.2213347 ↗
11. 10.1063/1.176494410.1063/1.1764944 ↗
12. 10.1063/1.192489110.1063/1.1924891 ↗
13. 10.1063/1.239281810.1063/1.2392818 ↗
14. 10.1143/JJAP.45.731110.1143/JJAP.45.7311 ↗
15. 10.1063/1.356175710.1063/1.3561757 ↗
16. 10.1088/0953-8984/26/47/47320110.1088/0953-8984/26/47/473201 ↗
17. 10.1103/PhysRevLett.89.05550210.1103/PhysRevLett.89.055502 ↗
18. 10.1063/1.176609310.1063/1.1766093 ↗
19. 10.7567/APEX.8.03150110.7567/APEX.8.031501 ↗
20. 10.1103/PhysRevLett.102.21760310.1103/PhysRevLett.102.217603 ↗
21. 10.1126/science.117704610.1126/science.1177046 ↗
22. 10.1103/PhysRevLett.95.25760110.1103/PhysRevLett.95.257601 ↗
23. 10.1088/0953-8984/18/6/L0310.1088/0953-8984/18/6/L03 ↗
24. 10.1063/1.247209210.1063/1.2472092 ↗
25. 10.1107/S010876810702395610.1107/S0108768107023956 ↗
26. 10.1103/PhysRevB.78.13410810.1103/PhysRevB.78.134108 ↗
27. 10.1103/PhysRevB.83.09410510.1103/PhysRevB.83.094105 ↗
28. P. Hirsch · 1977
29. D. B. Williams · 199610.1007/978-1-4757-2519-3 ↗
30. 10.1107/S056773947400057X10.1107/S056773947400057X ↗
31. 10.1016/0304-3991(87)90006-410.1016/0304-3991(87)90006-4 ↗
32. 10.1021/jp801449p10.1021/jp801449p ↗
33. 10.1103/PhysRevLett.108.04760110.1103/PhysRevLett.108.047601 ↗
34. 10.1103/PhysRevB.82.06410210.1103/PhysRevB.82.064102 ↗
35. 10.1063/1.486377810.1063/1.4863778 ↗