journal article·2017-04-17

Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride

Nitesh Kumar, Chandra Shekhar, Meixiao Wang, Yulin Chen, Horst Borrmann, Claudia Felser

Physical Review B· Volume 95· Issue 15
Publisher page

Abstract

The prediction of the quantum spin Hall effect in two-dimensional $\mathrm{ZrT}{\mathrm{e}}5$ and $\mathrm{HfT}{\mathrm{e}}5$ monolayers has generated considerable recent interest in these materials. In addition, Dirac points and chiral-anomaly-induced negative longitudinal magnetoresistance (MR) have been observed in $\mathrm{ZrT}{\mathrm{e}}5$. Herein, we study the transport behavior of $\mathrm{HfT}{\mathrm{e}}5$ single crystals in detail and find a large $(0.9\ifmmode\times\else\texttimes\fi{}{10}4%)$ out-of-plane transverse MR, which is among the highest for layered materials reported thus far. We also encounter a large linear in-plane transverse (magnetic field $\ensuremath{\parallel}\phantom{\rule{0.16em}{0ex}}c$, current $\ensuremath{\parallel}\phantom{\rule{0.16em}{0ex}}a)$ MR and discuss its possible origin. The mass anisotropy $(\ensuremath{\gamma}=5.4$ at 125 K) obtained by scaling angle-dependent MR data is consistent with the $\mathrm{HfT}{\mathrm{e}}5$ elliptical Fermi surface.
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OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications

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