Ultrastable One-Piece Pressure-Sensitive Memristor Based on Carbon Quantum Dots on BiFeO₃

Developing a multifunctional device with integration of data memory and sensing performance is expected to create an era of neuromorphic computing. In this paper, a one-piece pressure-sensitive memristor based on BFO(BiFeO 3 )-carbon quantum dots (CQDs) is designed to overcome the issues of redundant data transmission and the integration challenges typically faced when coupling pressure sensors with memristors. By introducing CQDs, the stability of the device’s memristive performance is significantly enhanced, achieving ultrahigh stability and maintaining consistent resistive storage performance for up to 6 months. Additionally, we observed that applying pressure to the device induces a change in its resistance, proving that it possesses both stable memristive performance and sensitivity to pressure. In addition, resistive switching and pressure-sensing mechanisms are also thoroughly explained through current fitting analysis. This study demonstrates the promising multifunctional integrated capabilities of BFO-CQD (single-material) devices, which offer a novel solution for achieving highly uniform artificial tactile devices.