Charge density wave modulation and gap measurements inCeTe3

We present a study of charge density wave (CDW) ordering in ${\mathrm{CeTe}}₃$ at room temperature using a scanning tunneling microscope and Raman spectroscopy. Two characteristic CDW ordering wave vectors obtained from the Fourier analysis are assessed to be $|{\mathbf{c}}^*\ensuremath{-}\mathbf{q}|=4.19\phantom{\rule{0.28em}{0ex}}{\mathrm{nm}}^{\ensuremath{-}1}$ and $|\mathbf{q}|=10.26\phantom{\rule{0.28em}{0ex}}{\mathrm{nm}}^{\ensuremath{-}1}$ where $|{\mathbf{c}}^*|=2\ensuremath{\pi}/c$ is the reciprocal lattice vector. The scanning tunneling spectroscopy measurements, along with inelastic light (Raman) scattering measurements, show a CDW gap ${\mathrm{\ensuremath{\Delta}}}_{\mathrm{max}}$ of approximately 0.37 eV. In addition to the CDW modulation, we observe an organization of the Te sheet atoms in an array of alternating V- and N-shaped groups along the CDW modulation, as predicted in the literature.