journal article·2019-12-26

Strain-dependent Raman analysis of the G* band in graphene

Yunlu Wang, Xiaocheng Zhou, Yanhan Jin, Xuewei Zhang, Zilong Zhang, Yang Wang, Jinglan Liu, Miao Wang, Yang Xia, Pei Zhao, Zhuhua Zhang, Hongtao Wang

Physical Review B· Volume 100· Issue 24
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Abstract

Compared with the well-established theory for other graphene Raman bands, the origin of the ${\mathrm{G}}*$ band at $\ensuremath{\sim}2450\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}1}$ remains unclear. A major debate lies at whether it should be assigned solely to the combined $q\ensuremath{\ne}0$ in-plane (i) transverse-optical (TO) and longitudinal-acoustic (LA) phonon modes, or to such a combination with additional $q=0 i\mathrm{TO}$ phonon overtones. A strain-dependent Raman analysis shows that during uniaxial strain this band exhibits only frequency redshift but no line shape changes. It is well interpreted by first-principles calculations, and thereby unambiguously identifies the origin of the ${\mathrm{G}}*$ band as the $q\ensuremath{\ne}0 i\mathrm{TO}$ and LA phonon combination.
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Research context

OpenAlex topics: Graphene research and applications · Mechanical and Optical Resonators · Carbon Nanotubes in Composites

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