Tungsten Oxide Nanostructures on Glass Substrate with Excellent Field Emission Properties for Cold Cathodes
Source abstract
Abstract
In this paper, the controlled synthesis of WO 3– x nanostructures on glass substrates was achieved by using a catalyst-free thermal oxidation method. The effects of the oxidation atmosphere on the growth of these nanostructures were investigated. The morphology, structure, and composition of the as-grown nanostructures were characterized. WO 3– x nanowires with high concentrations of oxygen vacancy defects were synthesized in the air atmosphere, while WO 3– x nanosheets with good crystallinity were obtained in the oxygen atmosphere. A stress-driven growth mechanism was proposed to explain the observed phenomena. In addition, the field emission from WO 3– x nanostructures was studied. WO 3– x nanowires (exhibit) a higher emission current density and stability compared to that of WO 3– x nanosheets, which can be attributed to defect-enhanced conductivity. Our results are important for understanding the growth mechanism of the WO 3– x nanostructures and will prompt their applications in cold cathodes and other fields.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Semiconductor materials and devices · Advancements in Battery Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology
Sun Yat-sen University
College of Electronic Engineering
South China Agricultural University
Funding
Guangdong Provincial Department of Science and Technology · National Key Research and Development Program of China · Guangzhou Municipal Science and Technology Project · Fundamental Research Funds for the Central Universities
References (43)
Show source-provided references
1. 10.3390/nano1317243710.3390/nano13172437 ↗
2. 10.3390/nano1415126010.3390/nano14151260 ↗
3. 10.1007/s10854-022-09420-110.1007/s10854-022-09420-1 ↗
4. 10.3390/nano1108215010.3390/nano11082150 ↗
5. 10.1016/j.vacuum.2019.01.03710.1016/j.vacuum.2019.01.037 ↗
6. 10.1021/acsaelm.0c0111110.1021/acsaelm.0c01111 ↗
7. 10.1002/aelm.20240059710.1002/aelm.202400597 ↗
8. 10.1039/C6RA27426A10.1039/C6RA27426A ↗
9. 10.1142/S021798491650054810.1142/S0217984916500548 ↗
10. 10.1016/j.vacuum.2021.11066010.1016/j.vacuum.2021.110660 ↗
11. 10.1063/1.502232010.1063/1.5022320 ↗
12. 10.1021/am507230t10.1021/am507230t ↗
13. 10.1039/C8NR08984A10.1039/C8NR08984A ↗
14. 10.1021/acsanm.4c0497910.1021/acsanm.4c04979 ↗
15. Chen, D., Zhang, G., Zhang, Z., Zheng, K., Deng, S., She, J., Xu, N., Chen, J. An 8-in. diagonal ZnO nanowire cold cathode panel for flat-panel X-ray source. 2018 31st International Vacuum Nanoelectronics Conference (IVNC 2018), IEEE. Kyoto, Japan, 2018: 1–2.10.1109/IVNC.2018.8519986 ↗
16. 10.1109/TNS.2021.305100810.1109/TNS.2021.3051008 ↗
17. 10.1016/j.apsusc.2019.04.16910.1016/j.apsusc.2019.04.169 ↗
18. 10.3390/nano1101024010.3390/nano11010240 ↗
19. 10.1038/s41598-018-20575-y10.1038/s41598-018-20575-y ↗
20. 10.1063/1.213600610.1063/1.2136006 ↗
21. 10.1021/cg100995f10.1021/cg100995f ↗
22. 10.1002/admt.20170002910.1002/admt.201700029 ↗
23. 10.1016/j.matchemphys.2024.12936410.1016/j.matchemphys.2024.129364 ↗
24. 10.1116/1.332792710.1116/1.3327927 ↗
25. 10.1039/C4CE01843E10.1039/C4CE01843E ↗
26. 10.1021/acsanm.9b0107410.1021/acsanm.9b01074 ↗
27. 10.1038/srep1826510.1038/srep18265 ↗
28. 10.1021/acsami.1c1715910.1021/acsami.1c17159 ↗
29. 10.1016/j.micromeso.2007.04.05410.1016/j.micromeso.2007.04.054 ↗
30. Díaz-Reyes J. · Superficies Y Vacío · 2008 · 21 · 12
31. 10.1016/j.jallcom.2020.15724910.1016/j.jallcom.2020.157249 ↗
32. 10.1116/1.299078310.1116/1.2990783 ↗
33. 10.1039/b902493j10.1039/b902493j ↗
34. 10.1039/D2NR00609J10.1039/D2NR00609J ↗
35. 10.1098/rspa.2014.081110.1098/rspa.2014.0811 ↗
36. 10.1088/0957-4484/23/9/09570610.1088/0957-4484/23/9/095706 ↗
37. 10.1016/j.apsusc.2017.09.00410.1016/j.apsusc.2017.09.004 ↗
38. 10.1021/am200519w10.1021/am200519w ↗
39. 10.1016/j.physe.2013.05.01710.1016/j.physe.2013.05.017 ↗
40. 10.1016/j.mee.2009.11.00810.1016/j.mee.2009.11.008 ↗
41. 10.1209/0295-5075/84/1600110.1209/0295-5075/84/16001 ↗
42. 10.1063/1.492915010.1063/1.4929150 ↗
43. 10.1016/j.vacuum.2021.11066010.1016/j.vacuum.2021.110660 ↗