Effect of In2Se3 Doping on Crystallization and Electrical Conversion Behavior of Sb Films
Source abstract
Abstract
The impact of doping In 2 Se 3 in Sb thin films on the crystal structure and electrical properties was investigated. The results demonstrate that the incorporation of In 2 Se 3 enhances the thermal stability and the data retention properties of the film. Moreover, it effectively mitigates resistance drift and elevates the band gap of Sb films. Appropriate doping with In 2 Se 3 inhibits grain growth, refines grain size, and facilitates the formation of an In–Sb bond. Additionally, surface roughness is reduced upon introduction of In 2 Se 3 into Sb, leading to significantly enhanced adhesion between the film and substrate, thereby improving device reliability.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China
Funding
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Hainan Normal University · State Key Laboratory of Superhard Materials, Jilin University
References (29)
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