Black Phosphorus/Dysprosium Hexaboride-Based Heterostructured Films for Field Emission Technologies

The demand for display devices increased very rapidly, and out of various display techniques, field emission-based display technology has huge potential to make next-generation display devices. A conventional field emitter uses single materials, which offer high quantum resistance between the emitter materials and substrate; thus, the heterostructure formation can be used for the reduction of quantum resistance by increasing the density of state near the Fermi level. Therefore, in the present work, black phosphorus (BP)/dysprosium hexaboride (DyB 6 ) heterostructures were used for field emission study. Here, BP was synthesized via a solvothermal route. The microstructural analysis of black phosphorus shows rod-like morphology of ∼1 μm length and ∼200 nm width. Apart from the BP, DyB 6 cubes of ∼100 nm were synthesized at 1000 °C in an argon atmosphere. The synthesized samples were used for making dispersion, and the as-prepared dispersion was used for the fabrication of films over a silicon substrate using a spin coating method. For the first time, field emission of BP/DyB 6 heterostructure films has been performed and hybrid structures show an enhanced enhancement factor (β = 2624) and a low turn-on field (3.74 V/μm). Mechanistic insights into the possible origin of enhanced.