Solution-Processed SnSe/MoSe2 Hybrid Nanostructures for High-Performance Infrared Photodetection
Source abstract
Abstract
MoSe 2 maintains high potential for various applications even though its low conductive property limits its technical performance. Herein, due to the integration of highly conductive SnSe, a mild solution-phase synthetic route was designed for fabricating SnSe/MoSe 2 heterojunction-like hybrid nanosheets with improved transport properties. These nanosheets were applied for setting up a vertical photodetector over a Si-wafer substrate, which was used for performing a high response speed and wide-spectrum detection. Under 1064 nm illumination with an intensity of 2 μW cm –2, the photodetector exhibited high responsivity (33.2 A W –1 ), high detectivity (5.1 × 10 12 Jones), and fast response speed (283 μs).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, University of Science and Technology of China (USTC), Hefei, Anhui 230026, People’s Republic of China
Laboratory of Nanomaterials for Energy Conversion (LNEC), University of Science and Technology of China (USTC), Hefei, Anhui 230026, People’s Republic of China
Nano Science and Technology Institute, University of Science and Technology of China (USTC), Suzhou, Jiangsu 215123, People’s Republic of China
Funding
University of Science and Technology of China · National Natural Science Foundation of China
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