journal article·2019-05-24

Inverse Stranski–Krastanov Growth in Single-Crystalline Sputtered Cu Thin Films for Wafer-Scale Device Applications

Seunghun Lee, Ho-Yeol Park, Su Jae Kim, Hyangsook Lee, Ik-Jae Lee, Chae Ryong Cho, Eunha Lee, Se-Young Jeong, Young Hee Lee

ACS Applied Nano Materials· Volume 2· Issue 5
Publisher page

Abstract

The single-crystalline copper (Cu) thin film is a platform substrate for the growth of numerous materials and has been a significant issue for the scientific community. The primary concern is the inevitable presence of stacking faults and twin boundary formation in inherent face-centered-cubic (FCC) structures. Here, we report a method for growing single-crystalline Cu(111) thin films on an Al2O3 substrate using conventional sputtering deposition. The desired growth configuration is induced by hidden incoherent twin boundaries (HITBs) embedded during the early growth stages. Two possible FCC stacking orders of Cu atoms, A-B-C-A and A-C-B-A rotated by 60°, give rise to HITBs between islands, as confirmed by X-ray diffraction phi-scan mapping. Such islands merge every three layers, triggering layer-by-layer growth that subsequently leads to an inverse Stranski–Krastanov growth mode. Single-crystalline Cu(111) thin film growth is confirmed by high-resolution transmission electron microscopy and electron backscatter diffraction mapping. Our approach paves the way for mass production of single-crystalline metal thin film and thus leads to substantial advanced research and electronic device application.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Copper Interconnects and Reliability · ZnO doping and properties · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Nanophysics and Advanced Materials, and Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, United States

Department of Cogno-Mechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea

Crystal Bank Research Institute, Pusan National University, Miryang 50463, Republic of Korea

Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Suwon 16678, Republic of Korea

Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37673, Republic of Korea

Department of Nanoenergy Engineering, Pusan National University, Busan 46241, Republic of Korea

Department of Optics and Mechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea

Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

Funding

National Research Foundation of Korea · Institute for Basic Science

References (53)

Show source-provided references
1. 10.1016/j.pmatsci.2009.03.00510.1016/j.pmatsci.2009.03.005 ↗
2. 10.1126/science.117465510.1126/science.1174655 ↗
3. 10.1146/annurev.matsci.30.1.22910.1146/annurev.matsci.30.1.229 ↗
4. 10.1021/jp076981k10.1021/jp076981k ↗
5. 10.1016/S0026-2714(99)00177-810.1016/S0026-2714(99)00177-8 ↗
6. 10.1007/s11837-001-0103-y10.1007/s11837-001-0103-y ↗
7. 10.1126/science.117124510.1126/science.1171245 ↗
8. 10.1088/0953-8984/22/48/48530110.1088/0953-8984/22/48/485301 ↗
9. 10.1016/j.scriptamat.2004.03.02810.1016/j.scriptamat.2004.03.028 ↗
10. 10.1007/s11434-012-5335-410.1007/s11434-012-5335-4 ↗
11. 10.1021/cm303445s10.1021/cm303445s ↗
12. 10.1063/1.165193510.1063/1.1651935 ↗
13. 10.1016/0040-6090(94)90162-710.1016/0040-6090(94)90162-7 ↗
14. 10.1016/S0040-6090(97)00954-110.1016/S0040-6090(97)00954-1 ↗
15. 10.1016/S0040-6090(96)08808-610.1016/S0040-6090(96)08808-6 ↗
16. 10.1016/0042-207X(94)90220-810.1016/0042-207X(94)90220-8 ↗
17. 10.1016/0039-6028(66)90075-610.1016/0039-6028(66)90075-6 ↗
18. 10.1016/j.stam.2003.12.00310.1016/j.stam.2003.12.003 ↗
19. 10.1038/s41598-017-01755-810.1038/s41598-017-01755-8 ↗
20. 10.1080/0141863950824189910.1080/01418639508241899 ↗
21. 10.1080/0141861980824191310.1080/01418619808241913 ↗
22. 10.2320/matertrans.M200918310.2320/matertrans.M2009183 ↗
23. 10.1116/1.58148910.1116/1.581489 ↗
24. 10.1021/acs.jpcc.5b0946110.1021/acs.jpcc.5b09461 ↗
25. 10.1016/j.tsf.2017.11.00910.1016/j.tsf.2017.11.009 ↗
26. 10.1016/j.actamat.2003.12.03710.1016/j.actamat.2003.12.037 ↗
27. 10.1063/1.312091610.1063/1.3120916 ↗
28. 10.1063/1.481782910.1063/1.4817829 ↗
29. Matthews J. W. · 1975
30. 10.1016/S1359-6454(98)00403-010.1016/S1359-6454(98)00403-0 ↗
31. 10.1002/pssa.221110011810.1002/pssa.2211100118 ↗
32. 10.1016/j.scriptamat.2010.09.03110.1016/j.scriptamat.2010.09.031 ↗
33. 10.1016/j.actamat.2009.12.01310.1016/j.actamat.2009.12.013 ↗
34. 10.1103/PhysRevB.53.R424110.1103/PhysRevB.53.R4241 ↗
35. 10.4028/www.scientific.net/MSF.207-209.20910.4028/www.scientific.net/MSF.207-209.209 ↗
36. 10.1063/1.317697910.1063/1.3176979 ↗
37. 10.1103/PhysRevB.83.06410610.1103/PhysRevB.83.064106 ↗
38. 10.1016/1359-6462(96)00220-510.1016/1359-6462(96)00220-5 ↗
39. 10.1016/S1359-6454(98)00164-510.1016/S1359-6454(98)00164-5 ↗
40. 10.1016/j.actamat.2007.07.00310.1016/j.actamat.2007.07.003 ↗
41. 10.1126/science.108389010.1126/science.1083890 ↗
42. 10.1063/1.296940910.1063/1.2969409 ↗
43. 10.1146/annurev-matsci-070813-11330410.1146/annurev-matsci-070813-113304 ↗
44. 10.1557/mrs.2016.6710.1557/mrs.2016.67 ↗
45. 10.1038/srep0623010.1038/srep06230 ↗
46. 10.1038/srep1071510.1038/srep10715 ↗
47. 10.1002/adma.20160176010.1002/adma.201601760 ↗
48. 10.1088/0034-4885/47/4/00210.1088/0034-4885/47/4/002 ↗
49. Ohring M. · 2001
50. 10.1038/nature0701210.1038/nature07012 ↗
51. 10.1002/adma.20120507610.1002/adma.201205076 ↗
52. 10.1002/adom.20160085610.1002/adom.201600856 ↗
53. 10.1002/adma.20120081210.1002/adma.201200812 ↗