DataVXACS Applied Nano MaterialsPaper
journal article·2026-01-09

HgTe Quantum Dots for Short-Wave Infrared Photoconductive Detectors

Mengjie Zhang, Chaoqi Hao, Liting Huang, Zhaowei Zhu, Zhisheng Li, Yuehua Li, Chuantong Cheng, Xu Zhang

ACS Applied Nano Materials· Volume 9· Issue 1
Publisher page
Source abstract

Abstract

HgTe quantum dots offer avenues for developing next-generation infrared detectors. However, the high toxicity of the current synthesis technique involving HgCl 2 and the low reproducibility of the classical hot injection method hinder large-scale production. This study synthesized HgTe quantum dots exhibiting a response at 1550 nm by replacing HgCl 2 with lower toxicity HgI 2 via flask synthesis and capillary synthesis methods at room temperature. Photoconductive devices were made by spin-coating with synthesized HgTe quantum dots, achieving a responsivity of 0.924 A/W and detectivity of 1.386 × 10 9 Jones under 1550 nm illumination at room temperature and 1 V bias.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Optoelectronic Materials and Devices

Institute of Semiconductors, Chinese Academy of Sciences

Center of Materials Science and Optoelectronics Engineering

University of Chinese Academy of Sciences

College of Engineering

China Agricultural University

College of Science

School of Chemical Engineering and Technology

Tianjin University

Funding

National Key Research and Development Program of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences · State Key Laboratory of Precision Measurement Technology and Instruments · National Natural Science Foundation of China

References (30)

Show source-provided references
1. 10.1063/1.309957210.1063/1.3099572 ↗
2. 10.1351/pac20007201029510.1351/pac200072010295 ↗
3. 10.1021/acsnano.8b0981510.1021/acsnano.8b09815 ↗
4. 10.1088/0034-4885/68/10/R0110.1088/0034-4885/68/10/R01 ↗
5. 10.1364/PRJ.44435410.1364/PRJ.444354 ↗
6. 10.1002/adom.20230097010.1002/adom.202300970 ↗
7. 10.1007/s00339-019-2750-210.1007/s00339-019-2750-2 ↗
8. 10.1016/j.pquantelec.2019.10022810.1016/j.pquantelec.2019.100228 ↗
9. 10.1063/1.511550110.1063/1.5115501 ↗
10. 10.1134/S106422692003012210.1134/S1064226920030122 ↗
11. 10.1021/acsnano.0c0914610.1021/acsnano.0c09146 ↗
12. 10.1038/s41928-021-00686-710.1038/s41928-021-00686-7 ↗
13. 10.1021/acsnano.8b0453910.1021/acsnano.8b04539 ↗
14. 10.1021/acsnano.8b0387110.1021/acsnano.8b03871 ↗
15. 10.1039/D2NR07309A10.1039/D2NR07309A ↗
16. 10.1038/s41377-022-01014-010.1038/s41377-022-01014-0 ↗
17. 10.1021/nn503805h10.1021/nn503805h ↗
18. 10.1021/jacs.8b0203910.1021/jacs.8b02039 ↗
19. 10.1021/acs.nanolett.2c0095010.1021/acs.nanolett.2c00950 ↗
20. 10.1021/ja207950910.1021/ja2079509 ↗
21. 10.1021/acs.jpclett.7b0077510.1021/acs.jpclett.7b00775 ↗
22. 10.1021/acs.jpclett.0c0155010.1021/acs.jpclett.0c01550 ↗
23. 10.1021/acs.jpcc.0c0125510.1021/acs.jpcc.0c01255 ↗
24. 10.1002/smtd.20230155710.1002/smtd.202301557 ↗
25. 10.1007/s12274-009-9010-210.1007/s12274-009-9010-2 ↗
26. 10.1021/acs.iecr.8b0039110.1021/acs.iecr.8b00391 ↗
27. 10.1002/adfm.20190646610.1002/adfm.201906466 ↗
28. 10.1016/j.jcis.2006.12.03510.1016/j.jcis.2006.12.035 ↗
29. 10.1039/c1jm12436f10.1039/c1jm12436f ↗
30. 10.1002/adma.20230651810.1002/adma.202306518 ↗