journal article·2022-12-23

Ba0.85Ca0.15Zr0.1Ti0.90O3/CoFe2O4/Ba0.85Ca0.15Zr0.1Ti0.90O3 Nanoscale Composite Films with 2–2 Connectivity for Magnetoelectric Actuation

Anantha P. Bhat, Manish Chandra Joshi, Harshvardaan M, Govind Ummethala, Sakthikumaran P, Lidia Kibkalo, Amir H. Tavabi, S. R. K. Malladi, Rafal E. Dunin-Borkowski, Anbarasu Manivannan, Ranjith Ramadurai

ACS Applied Nano Materials· Volume 5· Issue 12
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Abstract

Interfacial strain plays a vital role in determining the coupling strength between the magnetic and electrically ordered phases in magnetoelectric (ME) nanostructures. The interfacial strain and its gradient size in a polycrystalline trilayer ME composite with a specific microstructure were estimated by grazing incident X-ray diffraction (GI-XRD). The average interfacial strain was estimated to have a maximum value of ∼7%, and was found to be relaxed at a length scale of 25–35 nm away from the interface. The optimized gradient size estimated from the trilayer ME composite was utilized to fabricate multilayers with specific periodicities (“Δ”) and tested for the inverse piezomagnetic effect to estimate the optimum periodicity required to have enhanced ME coupling. Multilayers with periodicity (∼40 nm) compared to multilayers with relaxed/partial interfacial strain exhibited ∼25 to 26% increment in piezoelectric coefficient (d33) in the presence of a magnetic field. The constraint imposed on polarization by interfacial strain reflects on the enhancement of stiffness and introduces a quicker linear response to the piezoelectric displacement. In contrast, the partially strained and/or strain-relaxed layers exhibited nonlinear responses in polarization switching. The linear piezoelectric displacement in these strain-engineered ME composites makes them a potential candidate for device applications like actuators and transducers.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Hyderabad502204, Telangana, India

Phase Change Memory Lab, Advanced Memory and Computing Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai600036, India

Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, Jülich52425, Germany

Funding

Department of Science and Technology, Ministry of Science and Technology · Defence Research and Development Organisation

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