DataVXACS Applied Nano MaterialsPaper
journal article·2019-06-28

Two-Dimensional Energy Band Engineering in GaAs/AlGaAs Core–Shell Nanowires by Crystal-Phase Switching for Charge Manipulation

Yunhao Zhao, Jingtao Xie, Xuebing Zhao, Chenyuan Cai, Pingping Chen, Renchao Che

ACS Applied Nano Materials· Volume 2· Issue 6
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Source abstract

Abstract

Two-dimensional (2D) band engineering within nanowires is realized by axial switching of crystal-phase from wurtzite to zinc blende and a lateral GaAs/AlGaAs core–shell structure. Band alignment between different phases/materials is investigated through off-axis electron holography and interpolation calculations, which is further utilized for controlling the migration of carriers. Besides, the arrangement of the heterophase layers is found to affect the charge distribution severely. Above all, carrier reservoirs and a charged surface/interface could be achieved within a single nanowire by 2D band engineering. Our work offers a new idea on the construction of nanostructures for applications in photoelectric and electronic domains.
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: Nanowire Synthesis and Applications · Electronic and Structural Properties of Oxides · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, 2205# Songhu Road, Shanghai 200438, P. R. China

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500# Yutian Road, Shanghai 200083, P. R. China

Funding

Ministry of Science and Technology of the People's Republic of China · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China

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