Ultrasensitive Memristor-Based Gas Sensor of nm-Thick Layered Double Oxides for Trace DMF Detection

The development of devices with rapid response/recovery capabilities and the ability to record the time of toxic gas leaks is crucial for accident prevention and enhancing equipment safety performance. Recently, gas sensors based on memristors (gasistors) have been proposed to realize sensing and memory in a single device. In this study, a layered double oxide in nanoscale-based gasistor was developed for detecting dimethylformamide (DMF) at room temperature. This device exhibited bipolar resistance switching characteristics with good repeatability and stability. Gas-sensing measurements have shown the response of gasistor to 10 ppm DMF is high as 66.7 in the high resistance state (HRS), with response/recovery times both <0.5 s. Compared to ZnAl-LDOs-based thin-film type gas sensors, the response and recovery time of the gasistor were reduced by a factor of 80 and 100, respectively. In particular, as the concentration of DMF decreases, the gasistor switches from the HRS to the low resistance state, recording the leakage time of DMF. With good repeatability of the device, the threshold voltage of the device in the experiment can be reasonably predicted based on the stable resistance R b after gas removal and the current compliance I b . The present work brings creative inspiration for future research on gas sensors with high performance and expanded functions.