Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Metal and Thin Film Mechanics
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Affiliations
College of Electronic and Information, Southwest Minzu University, State Ethnic Affairs Commission, Chengdu 610047, China
Pico center, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, China
Institute of Integrated Circuits, China Center for Information Industry Development, Beijing 100048, China
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Department of Physics, Southern University of Science and Technology, Shenzhen 518056, China
Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
Institute of Microelectronics and Nanoelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310007, China
Zhejiang Laboratory, Hangzhou 311121, China
International Joint Innovation Center, Zhejiang University, Haining 314400, China
CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 04, France
Department of Electronic & Electrical Engineering, University of Sheffield, Mappin St., Sheffield S1 3JD, U.K.
Funding
Ministry of Science and Technology of the People's Republic of China · Central University Basic Research Fund of China · Science, Technology and Innovation Commission of Shenzhen Municipality · Major Scientific Project of Zhejiang Laboratory · National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province