Tilted InSb nanostructures fabricated by off-normal ion beam irradiation

Using a two-step focused ion beam irradiation process, tilted InSb nanostructures have been fabricated using a off-normal angle of irradiation. In the first step, a well-focused ion beam was used to irradiate the surface of the structure to achieve top-down sputtering. In the second step, the ion beam was used to irradiate the entire surface to promote bottom-up nanostructure growth through the migration of ion-beam-induced interstitial atoms. The formation of a nanostructure with a 46° tilt and an aspect ratio of 0.5 was achieved using ion beam irradiation at an angle of 45° in both steps of the process. The 2% concentration of point defects obtained by changing the volume of the nanostructure before and after irradiation contributed to the growth of the structure. The results showed that many point defects did not recombine, and survived to contribute toward the growth of the wall structure.