Monte Carlo simulations of the dechannelling and back scattering of He+ions by loop dislocations in silicon
Source abstract
Abstract
In this work a Monte Carlo simulation method is used to describe dechannelling and back scattering of He+ ions channelled along the 100 ⟨axis⟩ of a defective silicon crystal. The disorder is due to a buried layer of circular dislocation loops. Remarkable differences are found with respect to the results of the standard analytical treatments.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis
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