The mobility activation energy of hydrogenated amorphous silicon

Abstract Recent experimental results indicate that the density of conduction band tail states g(E) in a-Si:H below the mobility edge E c initially decreases linearly with increasing depth E c–E and subsequently, below an energy E o, decreases at an exponential rate. In this Letter we examine the temperature range in which such a density of states may be expected to lead to a mobility activation energy E μ close to E c – E o and how E μ will behave at other temperatures.