Microstructure change in SiC whiskers after high-temperature annealing

Abstract The microstructure of as-received and post-annealed SiC whiskers were investigated by transmission electron microscopy. In the as-received SiC whiskers, the thinner β-SiC parts were jointed with the one-dimensional disordered parts by {111}, twin boundaries. After annealing, β-SiC parts became coarser than the one-dimensional disordered parts at 1900°C and then disappeared at 2000°C.