HRTEM study of 1/6⟨411⟩ partial dislocations in hot hardness indented Ge
Source abstract
Abstract
Abstract Dislocations produced in Ge by high-temperature indentation have been studied using high-resolution transmission electron microscopy. An interesting defect has been observed which consists of a 1/6⟨411⟩ partial dislcation separated by an intrinsic stacking fault from a 1/6⟨121⟩ 30° partial. The unusual 1/6⟨411⟩ partial dislocation forms by the reaction of a perfect 1/6⟨110⟩ 60° and 1/6⟨211⟩ 90° partial dislocation belonging to different glide planes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Microstructure and mechanical properties · Semiconductor materials and interfaces · Advanced Electron Microscopy Techniques and Applications
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References (6)
Show source-provided references
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