η6 Organometallic Functionalization of Hexagonal Boron Nitride: Implications for Multifunctional Molecular and Nanoscale Interfaces on Electronic Applications
Source abstract
Abstract
Hexagonal boron nitride (h-BN), renowned for its formidable attributes─tensile strength (∼100 GPa), wide bandgap (∼6 eV), high thermal conductivity (227–280 W m –1 K –1 ), and chemical stability─poses a challenge in functionalization due to its electronegativity variance between boron and nitrogen. In a breakthrough, we present unprecedented organometallic functionalization via chromium carbonyl vapor exposure. This approach forms a pristine η 6 bond that preserves lattice planarity and interconnectivity between B- and N -centers, with the metal engaging each h-BN ring. Computational analysis validates spontaneous surface reaction (Δ G = −35.50 kcal/mol). Further, carbonyl groups seed silver nanoparticle growth, culminating in a conductive layer atop h-BN. This nondestructive, chemically versatile functionalization introduces a significant advancement in a multifunctional nanoscale interface, leveraging h-BN’s thermal and structural properties for 2D FET electronic devices and sensing applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Thermal properties of materials · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical Engineering, University of Illinois at Chicago, 929 W Taylor Street, Chicago, Illinois 60607, United States
Department of Physics, San Diego State University, 5500 Campanile Drive, San Diego, California 92182, United States
Barrington High School, 616 West Main Street, Barrington, Illinois 60010, United States
Funding
Division of Chemical, Bioengineering, Environmental, and Transport Systems
References (66)
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