TEM study of electron beam-induced crystallization of amorphous GeSi films
Source abstract
Abstract
Electron beam-induced crystallization of GeSi amorphous films with two different compositions, Ge0.7Si0.3 and Ge 0.1Si0.9, has been studied. The phase changes were examined by electron diffraction, high-resolution transmission electron microscopy and electron-diffraction simulation by the fast Fourier transformation method. A hexagonal structure induced by the electron irradiation was found in the Ge0.7Si0.3 film. In the Ge 0.1Si0.9 film, diamond cubic (dc) crystals and non-dc phases were formed by irradiation with low-density electron beams and high-density electron beams respectively. © 2004 Taylor & Francis Ltd.
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Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Silicon Nanostructures and Photoluminescence · Cultural Heritage Materials Analysis
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