DataVXACS Applied Nano MaterialsPaper
journal article·2024-07-26

Nanoscopic Characterization and Mechanism Analysis of LiTaO3/Si Interfaces Prepared by Mo/Au Nanoadhesive Layers for Applications in LiTaO3-Based Devices

Kang Wang, Jiao Fu, Yongqiang Ji, Wenbo Hu, Hongxing Wang, Shengli Wu

ACS Applied Nano Materials· Volume 7· Issue 14
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Source abstract

Abstract

To improve the temperature compensation of LiTaO 3 -based devices, room-temperature bonding of LiTaO 3 and Si wafers was performed in atmospheric air using Mo/Au (∼21.6 nm/ ∼78.6 nm) nanoadhesive layers. TEM observations show that each of the Mo/Si, Au/Mo, Au/Au, and Mo/LiTaO 3 interfaces is tightly bonded without any defects, and after surface activation, the thickness (1.6 nm) of the amorphous layer formed on the surface of LiTaO 3 is lower than that (3.3 nm) on the surface of Si. Due to the adsorption energy between Mo and Si and LiTaO 3 and Au, Mo as an underlayer material can enhance the adhesion between substrates and Au and form the Mo/Au film as a whole. Meanwhile, Mo can form strong Mo–Si and Mo-LiTaO 3 chemical bonds with activated Si and LiTaO 3 substrates, respectively. The existence of adsorption energy and chemical bonds ensured that the bonded LiTaO 3 /Si sample has a strong bonding strength (14 MPa).
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Research context

Nanomaterials

OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Information Engineering, Xianyang Polytechnic Institute, Xi’an 712000, China

Xi’an Key Laboratory of Advanced Control and Intelligent Process, Xi’an University of Posts and Telecommunications, Xi’an 710121, China

State Key Laboratory for Artifcial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

Key Laboratory for Physical Electronics and Devices, Ministry of Education, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Funding

National Key Research and Development Program of China · China Postdoctoral Science Foundation · Natural Science Basic Research Program of Shaanxi Province · Education Department of Shaanxi Province · National Natural Science Foundation of China · Xianyang City · Xianyang Polytechnic Institute

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