Interface Regulation and Properties of Transparent Anatase TiO₂ Photoanode Quantum Dot-Sensitized Solar Cells

In this work, we propose a strategy that is different from the traditional technology of increasing the specific area of the TiO 2 film to improve the carrying capacity of QDs in QDSSCs. Transparent anatase TiO 2 films are prepared by improving the optical transmittance of the photoanode TiO 2 film so that the attached QDs can capture more photons and improve the efficiency of utilizing QDs. This QDSSC preparation technology sacrifices part of QDs loading but improves the utilization efficiency of QDs. At the same time, the transparent bulk TiO 2 film decreases the transmission distance of photogenerated charge carriers, reduces the cross-interface transport, optimizes the transmission path, and reduces the carrier capture composite rate compared with the TiO 2 particle film. Therefore, it not only increases the V oc, FF, and PCE of QDSSCs to 0.628 V, 54.7, and 6.166%, respectively, but also has greater transparency. It meets the demand for solar cell transparency in practical applications and has a wider range of applications and better aesthetics. The mechanism simulation and theoretical analysis of photothermal conversion and electromagnetic mechanism show that the barrier of carrier transfer in bulk transparent anatase TiO 2 is lower than the physical barrier between anatase TiO 2 NPs. The advantages of the anatase transparent TiO 2 film in the process of photogenerated charge carrier transmission are verified. It provides an idea for the development of QDSSCs. It also brings the technology of transparent TiO 2 film to related fields.