Mn₂NT₂ (T = O, F) Nanosheets for Electrically and Thermally Driven Magnetic Tunnel Junctions

Because of their unusual electrical and magnetic properties, half-metals are well suited for sophisticated nanoscale spintronics applications. We examine the electronic structure, spin transport properties, and thermal spin-related transport properties of Mn2NT2 (T═O, F) monolayers by using the first principles, inspired by the recently published two-dimensional (2D) MXene family with diverse electronic properties. In addition, the constructed Mn2NO2/Ti2CO2/Mn2NO2 and Mn2NF2/Ti2CO2/Mn2NF2 devices exhibit bias-dependent 100% spin filtering effects. The Mn2NF2/Ti2CO2/Mn2NF2 device exhibits up to a tunneling magnetoresistance effect of 109% and thermally induced magnetoresistance effect of 1014% under temperature-driven conditions, with the thermally induced magnetoresistance also being the highest ratio available in 2D material-based in-plane magnetic tunnel junctions (MTJs). 2D Mn2NT2 is a viable option for spintronics applications due to its high Curie temperature, excellent spin transport, and thermal spin-dependent transport, which will promote extensive research on such highly spin-polarized 2D nanosystems.