DataVXACS Applied Nano MaterialsPaper
journal article·2019-08-23

Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

Chia-Jung Wu, Guan-Jhong Wang, Chyuan Hauer Kao, Zhong-Jie Yang, Hsiang Chen, Yung-Sen Lin, Chia-Feng Lin, Jung Han

ACS Applied Nano Materials· Volume 2· Issue 8
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Source abstract

Abstract

GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n+-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan

Department of Electronics Engineering, Chang Gung University, Kwei-Shan, Tao Yuan 333, Taiwan

Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan

Department of Electrical Engineering, Yale University, 15 Prospect St, New Haven, Connecticut 06511, United States

Department of Chemical Engineering, Feng Chia University, Seatwen, Taichung 40724, Taiwan

Funding

Ministry of Science and Technology, Taiwan

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