DataVXACS Applied Nano MaterialsPaper
journal article·2021-01-22

Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors

Junyoung Jin, Jihoon Kyhm, Do Kyung Hwang, Kyeong-Seok Lee, Tae-Yeon Seong, Gyu Weon Hwang

ACS Applied Nano Materials· Volume 4· Issue 1
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Source abstract

Abstract

We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 × 1012 Jones with a responsivity of up to 1.895 × 103 A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (μτ) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.
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Research context

Materials processing

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Gold and Silver Nanoparticles Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

Department of Material Science and Engineering, Korea University, Seoul 02841, Republic of Korea

Quantum Functional Semiconductor Research Center, Dongguk University, Joong-gu, Seoul 04620, Republic of Korea

Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

Funding

National Research Foundation of Korea · Korea Institute of Science and Technology

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