Thermally induced changes of the electro-optical properties of semi-insulating GaAs/AlGaAs multiple quantum well structures
Source abstract
Abstract
Abstract Temperature dependence of optical and electrooptical properties of the semi-insulating GaAs/AlGaAs multiple quantum well thin films was analyzed. The electroabsorption and thermoabsorption of the material in the excitonic resonance region were measured for the temperature range of 22 °C – 80 °C. The absorption edge shift due to the thermally induced change of the band gap width was observed as well as the decrease of the absorption in excitonic peaks.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Quantum and electron transport phenomena
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References (35)
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