Fast dynamics of 1.5μm photoluminescence in Er-doped SiO2 sensitized with Si nanocrystals

In order to investigate origin of fast photoluminescence at 1.5 μm reported to appear in Er-doped SiO2 sensitized with silicon nanocrystals, time-resolved photoluminescence measurements were compared between high temperature annealed Er-doped and Er-free samples. We confirm that this fast photoluminescence band observed in our materials is due to radiative recombination of Er3+ ions. At low temperatures, also a contribution from defect related-emission centered around 1300 nm appears and adds up to the Er-related emission.