journal article·2000-07

Properties of excitonic photoluminescence from ZnCdSe/ZnSe quantum well structures

Xingjun Wang, Daming Huang, Yanfeng Wei, Chuanxiang Sheng, Gencai Yu

Optical Materials· Volume 14· Issue 3
Publisher page

Abstract

Abstract The photoluminescence spectra from ZnCdSe/ZnSe quantum well structures are investigated. Both free exciton and associated low-energy peaks are observed under the continuous wave excitation. Experimental results indicate that the low-energy peaks are due to the charged excitons. The binding energies are measured to be 4.0, 7.0, 10, and 12 meV for the Zn0.8Cd0.2Se quantum wells of width 10.0, 5.0, 3.8, and 2.5 nm, respectively.
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (13)

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