journal article·1998-05

2 K photoluminescence of indirect GAP AlxGa1−xAs alloys grown under near-equilibrium conditions by LPE

G Martı́nez-Criado, E Purón-Sopeña, J Almeida-Garcı́a, I Riech, A Serra-Jones

Optical Materials· Volume 10· Issue 2
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Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Semiconductor materials and interfaces

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