V/III ratio and silicon doping effects on the properties of In1−xGaxP/GaAs grown by solid source molecular beam epitaxy

Abstract We report the molecular beam epitaxial (MBE) growth of high quality In1−xGaxP epilayers grown on GaAs (1 0 0) substrate using a valved phosphorus cracker cell at a wide range of lattice mismatch, V/III flux ratio and silicon (Si) doping concentrations. Film characterization was carried out using X-ray diffraction (XRD), Raman scattering spectroscopy, low temperature photoluminescence (PL) and Hall effect measurements. The PL full-width at half-maximum (FWHM) measured at 10 K increased from ∼6.5 to ∼34 meV when the lattice mismatch increased from