Excitonic resonant photorefractive devices around 1.06 μm
Source abstract
Abstract
Abstract InGaAs/GaAs multiple quantum well (MQW) photorefractive devices that have the sensitivity around the wavelength of 1.06 μm are fabricated and some characteristics are measured. Saturation intensity is 3.6 mW / cm 2 and cut off grating pitch is 1.4 μm . These values show that this device is usable in practical applications using Nd:YAG lasers. A vibration measurement system using two-wave mixing is also demonstrated.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photorefractive and Nonlinear Optics · Photonic and Optical Devices · Advanced Fiber Laser Technologies
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References (7)
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