Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing

Abstract New experiments are reported to explore the influence of hydrostatic pressure during post-implantation annealing on the photoluminescence (PL) from silicon oxynitride layers (SiO x N y , x =0.25, y =1) implanted with Ge + ions. It is shown that this treatment results in an enhancement of the PL intensity by an order of magnitude. The observed increase in the PL intensity is explained in terms of the enhanced formation of radiative recombination centers in the implanted silicon oxynitride. The nature of these centers is associated with silicon–silicon bond in silicon dioxide network (Si–Si center) and defect complexes incorporating Ge atoms (e.g., Si–Ge or Ge–Ge centers).